selective etching

The filaments were extracted by use of a selective etching technique, and then the morphologies of isolated filaments were characterized by SEM and TEM.

通过感应熔炼和冷拔变形制备了Cu 16Fe 2Cr原位复合材料 ,将铜基体选择腐蚀后提取出了纤维 ,采用SEM和TEM观察分析了纤维相结构。

The wet selective etching of InP over InAlAs by HCl:H3PO4:CH3COOH solution was mainly introduced.

介绍了两种选择腐蚀液对InGaAs(InAlAs)I/nP和InPI/nAlAs异质结构材料选择腐蚀的实验结果,重点介绍在InAlAs上面生长InP的湿法选择腐蚀,用HClH∶3PO4C∶H3COOH系列腐蚀液,InPI/nAlAs选择比大于300。