electron transfer

Due to its unique unsymmetrical structure, the electron transfer properties were investigated by.

对目标产物进行了红外、紫外、1HNMR和MS表征;由于目标化合物7含有不对称的二茂铁脲这一特殊结构,采用循环伏安(CV)方法对化合物7的电子迁移特性进行了研究。

Upon this theory the catalytic effect of catalyst is attributed to the electron transfer.

这个理论认为 :催化剂的催化作用是电子迁移形式。

Experimentation is made to compare electrode response between samples,which contain low-number of microbe,with and without low-molecule mediator,the mechanism of low-molecule mediator promoting electron transfer rate is discussed.

用氢酶如何催化代谢物上氢的氧化或质子的还原以及配合态液中氧化还原过程的电子迁移规律阐释了生物的氧化还原过程中的电催化反应机理。

Through UV-Vis, XRD, SEM and AFM characterizations, the difference in electron mobility between 1 and 2 can be.

利用空间电荷限制电流(SCLC)法测试了二种氟代苝酰亚胺的电子迁移率,一种是N,N'-二(五氟代苯基)-3,4,9,10-苝四羧基二酰亚胺(1),另一种是N,N'-二(1,1-二氢十五氟代辛基)-3,4,9,10-苝四羧基二酰亚胺(2)。

An electron mobility of 6×10~4 cm~2/Vs with a carrier density of 2.

结果表明,电离杂质散射控制所有样品在低温时的电子输运过程,而高温时材料的电子迁移率主要由极性光学声子的散射过程决定;C的沾污对石墨舟中生长的InAs0。

An analytical model of electron mobility for strained-silicon channel nMOSFETs is proposed in this paper.

提出了一个应变硅沟道电子迁移率解析模型。

high electron mobility transistor

高电子迁移率晶体管

After this interview, I learned about electron mobility.

通过这次访问，我了解到电子迁移。

A Study on the Modeling of AlGaN/GaN High Electron Mobility Transistors;

AlGaN/GaN高电子迁移率晶体管的模型研究

Monte Carlo Study of Channel Mobility in SiC MOSFET

SiC MOSFET沟道电子迁移率的Monte Carlo模拟研究

Optical Phonon Influence on the Mobility of Electrons in AlN/GaN Quantum Wells;

光学声子对AlN/GaN量子阱中电子迁移率的影响

Effects of Electron Mobility on Yttria-stabilized Zirconia

电子迁移对钇稳定氧化锆电解质性能的影响

Pressure Effect on the Mobility of Electrons in Quantum Wells with Finite Barriers;

有限深量子阱中电子迁移率的压力效应

Electron Mobility in Heterojunctions and Its Hydrostatic Pressure Effect;

半导体异质结中的电子迁移率及其压力效应

MBE Growth of InP Based PHEMT Epitaxial Materials;

分子束外延生长InP基赝配高电子迁移率晶体管外延材料

Influence of Optical Phonons on the Electronic Mobility in a Strained Wurtzite AlN/GaN Heterojunction under Hydrostatic Pressure;

压力下光学声子对应变纤锌矿AlN/GaN异质结中电子迁移率的影响

cataphoretic migration speed

阳离子电泳迁移速度

Research on the Migration of Charged Ion in Vertical Electrophoresis;

荷电粒子在垂直电泳中的迁移规律研究

Studies on the Ion Transport Properties of LiClO_4-PC-DMC Electrolytes for Lithium Battery;

锂电池LiClO_4-PC-DMC电解液体系离子迁移性质研究

Design and Simulation of Pre-amplification Circuit for IMS Current Signals

离子迁移谱电信号前置放大电路的设计与仿真

The electron is able to travel through the crystal as easily as through a metal.

这个电子像穿过金属一样很容易在晶体中迁移。

Application of VUV-Ion Mobility Spectrometry for the Analysis of Volatile Organic Compouds;

VUV电离离子迁移谱技术在VOCs测量中的应用

The mobility value used is that of the minority carrier.

所采用的迁移率值都是少子迁移率。

electrophoretic mobility shift assay

电泳迁移率变动分析