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基本解释隐埋氧化物隔离工艺

网络释义

1)box,隐埋氧化物隔离工艺2)buried oxide isolation process,隐埋氧化物隔离工艺3)buried-channel,隐埋沟道4)recessed channel,隐埋槽5)base insert,隐埋基极6)buried layer,隐埋层7)buried region,隐埋区8)buried laying,隐埋敷设9)buried-channel MOSFET,隐埋沟道MOSFET10)buried collector regin,隐埋集电区

用法和例句

The I-V characteristics for SiC buried-channel MOSFETs based on an average mobility model is presented.

提出了一种SiC隐埋沟道MOSFET平均迁移率模型,并在此基础上对器件I-V特性进行了研究。

The effects of several factors on mobility in 4H-SiC buried-channel (BC) MOSFETs are studied.

研究了几种因素对4H-SiC隐埋沟道MOSFET沟道迁移率的影响。

Extraction of channel carrier concentration using C-V method for SiC buried-channel MOSFET;

C-V法提取SiC隐埋沟道MOSFET沟道载流子浓度

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网络释义

用法和例句

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