electron nuclear double resonance

Development of an electronic optometer based on SCM;

单片机电子视力计的研制

Clinical analysis on liposuction adopting electronic liposuction machine;

医用电子去脂机行抽脂术临床效果分析

Research on the development of automobile electronic information industry ——based on the theory of industry growth;

基于产业成长理论的中国汽车电子信息产业发展研究

Mixed proton-electron conductors for hydrogen permeation;

质子-电子混合导体透氢膜

Study of ion catch technology of electron microscopy in virus detection of patient s excrement;

离子扑捉电子显微镜技术检测患者粪便中病毒的方法

Teaching research on electric and electron speciality oriented art recruiting students;

面向文科招生的电气、电子专业教学研究

A comparison of ionizing radiation damage in CMOS devices from ~(60)Co Gamma rays,electrons and protons;

CMOS器件~(60)Coγ射线、电子和质子电离辐射损伤比较

In order to study avalanche ionization mechanism, it is inevitable to deal with rates of electrons absorbing and losing energy.

研究雪崩破坏机理,必然涉及到电子吸收激光能量的速率和电子损耗能量的速率,这些都与电子和声子的散射有密切的联系。

N-channel MOS transistors from CC4007,CC4011 and LC54HC04RH device were irradiated with different dose rate Co-60 gamma rays,lower energy protons(less then 9MeV)and 1MeV electrons.

利用不同剂量率γ射线、低能 (小于 9MeV)质子和 1MeV电子对CC40 0 7RH、CC40 11、LC5 4HC0 4RHNMOS FET进行了辐照实验 ,结果表明 ,在 +5V偏置条件下 ,9MeV以下质子造成的损伤总是小于60 Co,而且质子能量越低 ,损伤越小 ;对于同等的吸收剂量 ,1MeV电子和60 Co造成的损伤差别不大 ;在高剂量率γ射线辐射下 ,氧化物陷阱电荷是导致器件失效的主要原因 ,在接近空间低剂量率辐射环境下 ,LC5 4HC0 4RH电路失效的主要原因是辐射感生界面态陷阱电荷 ,而CC40 0 7RH器件则是氧化物陷阱电荷 。