microwave plasma enhanced CVD system

According to the character of VO2 taking phase transition at near 68 ℃,using the mixture gas of high pure hydrogen and high pure nitrogen as precursor,VO2-xNy thin films are synthesized at low temperature by microwave plasma enhanced procesesses using V2O5 as molecular precursors through coating film on glass slice.

选用V2O5为前驱物,通过在玻璃片上镀膜,利用高纯氢和高纯氮作为气源,采用微波等离子体增强法,在低温条件下合成了氮杂二氧化钒(VO2-xNy)样品。

In the thesis, carbon nano-tubes (CNTs) are synthesized by microwave plasma enhance chemical vapor deposition (MPCVD).

本论文利用微波等离子体增强化学气相沉积(MPCVD)法制备了碳纳米管薄膜，并以此为阴极开发了二极型七段FED数码管和点阵式FED显示屏的驱动电路。

The as grown, ZnO films annealed after growth and annealed during growth(denoted as S1, S2 and S3, respectively) were grown on C plane sapphire substrate by plasma enhanced MOCVD and characterized by XRD and X ray photoelectron energy spectra.

利用等离子体增强型MOCVD设备 ,在C面蓝宝石上生长出了C轴取向的未退火、生长后一次退火和生长过程中多次退火的ZnO薄膜样品 ,并通过X光衍射和X光电子能谱对样品进行了表征 ,结果表明生长过程中多次退火的样品具有较高的质量 ,O/Zn原子比较大 ,且受空气中氧和水汽的影响最小。